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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD600 DESCRIPTION *High Collector Current-IC= 1.0A *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *Good Linearity of hFE *Low Saturation Voltage *Complement to Type 2SB631 APPLICATIONS *Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC ICP Collector Current-Continuous 1 A Collector Current-Pulse Collector Power Dissipation @ TC=25 2 A 8 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 1 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 10A ; IE= 0 IC= 1mA ; RBE= IE= 10A ; IC= 0 IC= 500mA; IB= 50mA IC= 500mA; IB= 50mA VCB= 50V; IE= 0 VEB= 4V; IC= 0 IC= 50mA ; VCE= 5V IC= 500mA ; VCE= 5V IC= 50mA ; VCE= 10V IE= 0; VCB= 10V,ftest= 1MHz 60 20 130 20 MIN 100 100 5 TYP. 2SD600 MAX UNIT V V V 0.4 1.2 1 1 320 V V A A MHz pF Switching times tf toff tstg Fall Time Turn-Off Time Storage Time IC= 500mA ,RL=24, IB1= -IB2= 50m A,VCE= 12V 0.1 0.5 0.7 s s s hFE-1 Classifications D 60-120 E 100-200 F 160-320 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD600 isc Websitewww.iscsemi.cn |
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